以钨酸(H2WO4)为钨前驱体，十二烷胺(DDA)为模板剂，利用模板剂的结构导向功能，合成了比表面积为57.3 m2·g-1的介孔三氧化钨(DDA-WO3)，是未用DDA制备的非介孔WO3(H2WO4-WO3)的2.35倍。X射线衍射(XRD)结果表明，400 ℃下煅烧的DDA-WO3是具有单斜晶型结晶孔壁的无序介孔结构。此外，400~550 ℃下煅烧的DDA-WO3的结晶度均高于同条件的H2WO4-WO3。400 ℃下的DDA-WO3/FTO(掺氟氧化锡)在1.0 V的Ag/AgCl偏压作用下，可以产生0.18 mA·cm-2的饱和光电流,是H2WO4-WO3/FTO(0.06 mA·cm-2)的3倍。增强的光电化学(PEC)活性主要因为DDA-WO3/FTO的大表面积降低了低结晶度对PEC性能的不利影响，成为影响PEC活性的主要因素。500 ℃煅烧导致了DDA-WO3/FTO介孔结构的坍塌，但高的结晶度仍然保持其优越的PEC催化活性。

Mesoporous tungsten trioxide (DDA-WO3) was prepared using tungstic acid (H2WO4) as a tungsten precursor, dodecylamine (DDA) as a surfactant template which has structure guiding function. The specific surface area (57.3 m2·g-1) of DDA-WO3 was 2.35 times of 24.5 m2·g-1for WO3 (H2WO4-WO3) prepared without DDA. X-ray diffraction (XRD) result of the DDA-WO3 calcined at 400 ℃ indicates that a crystalline framework with disordered arrangement of pores. The crystallinity of DDA-WO3 calcined at 400~550 ℃ is higher than each of H2WO4-WO3. DDA-WO3/FTO (SnO2∶F) calcined at 400 ℃ generates photoanodic current density of 0.18 mA·cm-2 at 1.0 V versus Ag/AgCl, which is about 3 times higher than that of the H2WO4-WO3/FTO(0.06 mA·cm-2). The enhanced photoelectrochemical (PEC) performance of DDA-WO3/FTO suggests that the higher specific surface area of mesoporous structure is a dominant factor for the PEC performance rather than insufficient crystallinity. DDA-WO3/FTO calcined at 500 ℃ still exhibites excellent PEC performance than H2WO4-WO3/FTO due to higher crystallinity, although the degradation of the mesostructure at higher temperature.