GaAs基980 nm半导体激光器在材料加工、通信和医疗等领域有着重要应用。应变量子阱结构的出现提高了GaAs基半导体激光器的转换效率、输出功率和可靠性。本文综述了高功率GaAs基量子阱激光器历史发展，介绍了高功率半导体激光器的外延结构、芯片结构和封装结构设计，重点阐述了影响高功率GaAs基量子阱激光器光电性能、散热和实际应用的问题。针对以上问题讨论了相应解决方案及研究成果，并指出了各个方案的不足之处和改进方向。最后，总结了高功率半导体激光器的发展现状，对高功率半导体激光器发展方向进行了展望。

980 nm GaAs based semiconductor lasers have important applications in the fields of materials processing, communication, medical treatment and so on. The conversion efficiency, output power and reliability of GaAs based semiconductor lasers have been improved because of the emergence of strain quantum well. Historical development of GaAs based quantum well laser are reviewed and epitaxial structure design, chip design and chip encapsulation design are introduced in this paper. More importantly, the problems of effect on optical-electrical performances, heat-sink cooling and practical application are discussed emphatically for high power GaAs based quantum well laser. The proposed solutions and achievements are discussed based on the above problems, the shortcomings and improvement directions of each solution are pointed out. Finally, the development status of high power semiconductor lasers is summarized and the development direction is prospected.