立方砷化硼(BAs)为间接带隙、闪锌矿结构的Ⅲ-Ⅴ族化合物半导体材料。理论分析预测BAs具有仅次于金刚石的超高热导率，在电子器件散热领域表现出广阔应用前景，成为当前的研究热点。近年来立方BAs单晶材料的制备取得突破性进展，采用化学气相传输法(CVT)合成了毫米尺寸的高质量单晶，室温下热导率高达1 300 W·m-1·K-1。本文介绍了BAs单晶的性质和生长方法，综述了材料研究进展，阐述了晶体生长面临的技术挑战，并对发展前景进行了展望。

Cubic boron arsenide (BAs) belongs to Ⅲ-V compound semiconductor with indirect band gap and zin-blende FCC structure. First-principles calculations based on four-phonon scattering indicate that zinc-blende BAs has an unusually high room-temperature thermal conductivity which is second only to that of diamond. BAs single crystal demonstrates broad application prospects in electronics thermal management due to the unusually high thermal conductivity, and it becomes one of hotpots in the field of compound semiconductor materials. Great progress has been made in the growth of cubic BAs single crystal for the past few years. Ultrahigh thermal conductivity of 1 300 W·m-1·K-1 at room temperature is experimentally observed in high-quality BAs single crystal with millimeter-sized synthesized by chemical vapor transport (CVT) growth method. Undoped BAs is p-type conducting due to the existence of the intrinsic acceptor defects. The application prospects, crystal structure, material properties and crystal growth method of cubic BAs are introduced. The research progress in crystal growth is reviewed, the technical challenges of crystal growth is described, and development prospects are also analyzed.