反射镜作为光子集成电路的基本元件,被应用于量子通信、智能电网、航空航天等多种领域。高反射率、低温度敏感性的片上光反射镜可以大大简化光子集成电路系统,提高光子集成电路的可靠性和稳定性。因此,提出了一种基于绝缘体上硅的高反射率、低温度敏感性片上光反射镜方案。该方案采用Sagnac环结构,可在3.41 nm波长范围内实现超高反射率(反射率大于90%),在32.85 nm波长范围内实现高反射率(反射率大于80%)。通过片上微型热电极对该反射镜进行加热,结果表明,当微型热电极的功率从0 mW逐渐升高至6 mW时,在1566.5~1568.58 nm波长范围内反射镜的波长漂移量小于0.045 nm,反射率变化小于0.19 dB。该反射镜具有尺寸小、质量轻、制造简单、反射率高、损耗小、温度不敏感等优势,可广泛应用于激光器、微波光子滤波器、光传输网等通信和信号处理领域。

As the basic component of photonic integrated circuits, optical reflectors are widely used in plenty of fields, such as quantum communications, smart grids, aerospace and so on. On-chip optical reflectors with high reflectance and low temperature sensitivity shall greatly simplify the photonic integrated circuit systems and improve the reliability and stability of the photonic integrated circuits. Therefore, we propose an on-chip optical reflector based on silicon on insulator with high reflectance and low temperature sensitivity. Our scheme is based on a Sagnac loop and can obtain ultra-high reflectance with a wavelength range of 3.41 nm (reflectance more than 90%) and high reflectance with a wavelength range of 32.85 nm (reflectance more than 80%). The reflectors are heated by the on-chip micro-electrodes, and the results show that when the power of the micro hot electrode is gradually increased from 0 mW to 6 mW, the wavelength shift of the reflector in the wavelength region of 1566.5-1568.58 nm is less than 0.045 nm. The reflectance change is less than 0.19 dB. The reflector has the advantages of small size, light weight, simple fabrication, high reflectance, low loss, and temperature insensitivity. It can be widely used in communication and signal processing fields such as lasers, microwave photonic filters, and optical transmission networks.