磁控溅射系统中薄膜厚度的均匀性是关键指标之一。通过分析磁场强度、靶材与基板的距离和气体压强对Si₃N₄和SiO₂两种薄膜厚度均匀性的影响,借助Langmuir探针分析等离子体的密度,并采用二进制阶梯式充气方式调整纵向的均匀性。通过对靶材加载正弦半波电压并使用MATLAB软件确定振幅及相位参数,从而调整横向的均匀性。实验结果表明,对于Si₃N₄膜层,其在横向上、中和下的均匀性分别为±1.27%、±0.62%和±1.33%,纵向的均匀性为±0.33%;对于SiO₂膜层,其在横向上、中和下的均匀性分别为±1.12%、±0.42%和±1.23%,纵向的均匀性为±0.25%。

Film thickness uniformity in a magnetron sputtering system is one of the key indicators. The effects of magnetic field intensity, distance between target and substrate and gas pressure on the thickness uniformity of Si₃N₄ and SiO₂ films are analyzed. The plasma density is analyzed by using Langmuir probe, and the longitudinal uniformity is adjusted by binary gradient inflation mode. By loading sine half-wave voltage to the target and using MATLAB software to determine the amplitude and phase parameters, so as to adjust the uniformity of the transverse. The experiment results show that for the Si₃N₄ film, the transverse uniformity is ±1.27%, ±0.62%, and ±1.33% respectively at the top, middle, and bottom, and the longitudinal uniformity is ±0.33%. For the SiO₂ film, the transverse uniformity is ±1.12%, ±0.42%, and ±1.23% respectively at the top, middle, and bottom, and the longitudinal uniformity is ±0.25%.