长余辉发光材料因其独特的延迟发光特性，在夜间安全、生物荧光标记、光学信息存储和光学防伪等领域得到了广泛的应用与研究。长余辉发光材料的应用与其陷阱深度密切相关，其中面向光学信息存储应用的长余辉发光材料需要具备较大的陷阱深度以保证较高的室温存储效率。基于深陷阱长余辉发光材料的光学信息存储技术具有重复擦写性好、背景噪声小、存储容量大、可设计性强等优点，特别在多维光学信息存储技术发展方面具有巨大应用潜力，成为当前新型光电功能材料的研究热点之一。简要概述深陷阱长余辉发光材料在光学信息存储应用领域的研究背景，介绍基于深陷阱载流子俘获和再释放的信息存储和读取原理，梳理近年来深陷阱长余辉发光材料研究的重要突破和最新进展，最后对深陷阱长余辉发光材料未来的发展进行展望。

Persistent luminescent (PersL) materials, due to the unique delayed emission feature, have been extensively studied and applied in the fields of night-vision security, biological fluorescence labeling, optical information storage, and optical anti-counterfeiting. The application of PersL materials is closely related to the trap depth, in which the PersL materials used for the optical information storage need to have a larger trap depth to ensure a higher storage rate at room temperature. Optical information storage technology based on deep-trap PersL materials possesses excellent rewritability, low background, large storage capacity, and high design ability, notably showing great potential for the development of multidimensional optical information storage technology. It has thus become a significant research area for advanced optical materials. In this article, the background of deep-trap PersL materials for the optical information storage applications is briefly introduced. Then, the basic mechanisms of the information storage and reading based on the deep-trap charge carrier capture and release in PersL materials are given. The important breakthroughs and the latest progress of the deep-trap PersL material research are overviewed. Finally, the future development of deep-trap PersL materials is prospected.