强激光与粒子束, 2017, 29(4): 045001, 网络出版: 2017-04-01

基于场效应管与阶跃恢复二极管的皮秒级脉冲源设计

Design of picosecond pulse source based on MOSFET and step recovery diode
作者单位

1中南大学 航空航天学院, 长沙 410083

2兰州理工大学 计算机与通信学院, 兰州 730050

摘要
针对已有脉冲源无法兼顾脉冲宽度和幅值的现象,提出一种基于场效应管(MOSFET)和阶跃恢复二极管(SRD)相结合的皮秒级脉冲源设计方案。通过研究分析传统的几种脉冲源的设计方案,设计出一种百伏级的高重频皮秒级脉冲发生器,在PSPICE上对设计方案进行仿真并制作出脉冲源PCB板,实测在2 MHz的重频下产生半幅脉宽约为400 ps、幅度110 V以上的极窄脉冲,波形稳定,为高分辨的超宽带探测雷达发射机的设计提供了新的选择方案。
Abstract
As the existing pulse source can not balance pulse width and amplitude, a scheme of based on field effect transistor (MOSFET) and step recovery diode (SRD) combined with picosecond pulse source was put forward. Analyzing traditional designs of several pulse sources, we designed a high repetition rate picosecond pulse generator of 100 volt level and made a design simulation with PSPICE and developed the pulse source PCB board. Measurement shows 2 MHz repetition rate, half amplitude width 400 ps around, range above 110 V and stable waveform. The scheme providedes a new selection for high resolution UWB detection radar transmitter.
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