本文采用显微拉曼光谱实验的方法对红外目标模拟器中的重掺杂Si电阻微桥单元进行了绝对温度的测量,并根据斯托克斯与反斯托克斯强度与温度关系以及Raman峰位移动与温度依赖关系两种方法确定温度,保证了所测温度的可靠性.针对Si桥建立相应的Raman模型,选择合适的物理参数,最终得到了反映Si桥工作特性的电流-温度关系.此外,通过对Si桥的空间分辨的测量实验,得到了Si桥上的温度分布状况,对了解其电阻、热导及氧化等特性十分有用.所有结果表明该方法是器件优化的有效途径.

Micro-Raman scattering measurements have been used to determine the absolute temperature on heavy boron-doped Si bridge in infrared emitter. Two methods employed simultaneously, namely the intensity ratio of the Stokes to anti-Stokes Raman peaks and the temperature dependence of the position of the Raman peak, verified the measured temperature. By means of proper spectral modeling and parameter choosing, we have formulated the current-temperature dependence curve reflecting the characteristics of the Si bridge at the state of its working. Moreover, the temperature distribution over the bridge has been obtained owing to the high spatial resolution on the order of micrometer, through which some detailed performances, such as resistance, heat conduction, and oxidation effect, can be also investigated. All the results indicate that the micro-Raman measurement of temperature is a good approach to device optimization.