采用自制的LP-MOCVD设备,在Ge衬底外延生长出GaAs电池结构,并对电池结构片进行了后工艺制作,同时对电极制作中银镀层结合力的影响因素进行了研究。研究结果表明选择带电入池,无冲击电流方式时,可增强银镀层的结合力。同时采用扫描电子显微镜(SEM)和电子微探针对n型Ge衬底上AuGeNi背电极不同层面的成分进行了分析测试,测试数据表明钨污染将会使银镀层结合力变差。

GaAs/Ge heterostructure has been grown by home-made low pressure MOCVD system, and influencing factor of adhesion of silver electroplating layer in making electrode has been studied. The result showed that the mode of sample entering electroplating bath with electrification and without impact current could made the adhesion harder. The different layer element of AuGeNi back electrode on Ge substrate was analysed by means of scanning electron microscopy(SEM) and electron microprobe analysis, and the datum indicated wolfram pollution affected the adhesion of silver electroplating layer.