中国激光, 2005, 32 (2): 161, 网络出版: 2006-06-01
高饱和电流14xx nm应变量子阱激光器的研制
High-Saturation Current 14xx nm Strained Quantum Well Lasers
激光技术 应变量子阱激光器 光纤拉曼放大器 14xx nm抽运源 锥形增益区 laser technique strained quantum well laser fiber Raman amplifier 14xx nm pump laser tapered gain region
摘要
报道了14xx nm应变量子阱(SQW)激光器管芯的研制成果。通过金属有机化学气相沉积(MOCVD)生长工艺生长14xx nm AlGaInAs/AlInAs/InP应变量子阱外延片,采用带有锥形增益区的脊型波导结构制作激光器管芯。生长好的外延片按照双沟脊型波导激光器制备工艺进行光刻、腐蚀,制作P面电极(溅射TiPtAu)、减薄、制作N面电极(蒸发AuGeNi),然后将试验片解理成Bar;为获得高的单面输出功率,用电子回旋共振等离子体化学气相沉积(ECR)进行腔面镀膜,HR=90%,AR=5%;解理成的管芯P面朝下烧结到铜热沉上,TO3封装后在激光器综合测试仪进行测试。管芯功率达到440 mW以上,饱和电流3 A以上,峰值波长1430 nm,远场发散角为40°×14°。
Abstract
The research of the 14xx nm strained quantum well (SQW) lasers is reported. The 14xx nm AlGaInAs/AlInAs/InP SQW lasers with tapered gain regions emitting at 1430 nm are fabricated. The SQW epitaxial structure is grown by metal organic chemical vapor deposition (MOCVD) and ridge-type waveguide structure with tapered gain regions is used as laser core. The process of preparing double-channel ridge-type waveguide laser epitaxial structure includes lithographic, etching, metallization (P-side
张洪波, 韦欣, 朱晓鹏, 王国宏, 张敬明, 马骁宇. 高饱和电流14xx nm应变量子阱激光器的研制[J]. 中国激光, 2005, 32(2): 161. 张洪波, 韦欣, 朱晓鹏, 王国宏, 张敬明, 马骁宇. High-Saturation Current 14xx nm Strained Quantum Well Lasers[J]. Chinese Journal of Lasers, 2005, 32(2): 161.
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