采用射频磁控溅射工艺,在K9玻璃基片上用Ag-In-Sb-Te合金靶制备了相变薄膜。对沉积态薄膜在300℃下进行了热处理,测量了薄膜的光学性质。通过改变本底气压、溅射气压及溅射功率,研究了工艺参数对薄膜光学性质的影响。实验表明,本底气压、溅射气压及溅射功率综合决定了AgInSbTe薄膜的光学性质。对AgInSbTe薄膜的制备,选择较高的本底真空度、适当的溅射气压及溅射功率是非常重要的。

The phase change films were deposited on K 9 glass substrate by RF magnetron sputtering technique with an Ag In Sb Te alloy target. The as deposited films were annealed at 300 ℃. The influences of background pressure, sputtering pressure and sputtering power on the optical properties of the phase change films are studied. It was found that the optical properties of the phase change films were synthetically determined by sputtering parameters and lower background pressure, while the proper sputtering pressure and sputtering power were very important for the AgInSbTe phase change films.