以真空蒸镀法在K9基底上制备了TeOx单层薄膜.采用特定的定位方法,使用原子力显微镜对不同记录功率下薄膜中短波长静态记录点(514.5nm)的结构进行了分析.实验结果表明薄膜具有良好的记录灵敏性,在记录功率1.5mW时就可产生较高的反射率对比度.记录点具有明显的凹陷和凸起结构,随着记录功率的提高,凹陷和凸起增强,记录点增大.记录点的形态结构和记录前后反射率对比度是直接相关的.研究揭示了原子力显微镜在提高薄膜存储特性如信噪比、存储密度等方面的分析功能.

Monolayer TeO x thin film was deposited on K 9 glass substrates by vacuum evaporation. By adopting a specific locating method, atomic force microscope (AFM)could be used to analysis the structure of short wavelength laser static recording bits, which were recorded at different writing powers in TeO x thin film. It was found that the film had good writing sensitivity, the reflectivity contrast could reach to a high value at writing power 1.5 mW. The bits were characterized by obvious hollows and mounds. With the increase of writing power, the height of hollow and mound increased, so did the length of the recording bits. The present setup allows the correlation of the change in reflectivity contrast caused by a specific laser pulse to the bit topography. This establishes the use of the analytical power of AFM for dedicated efforts in improving the performance, e.g., signal to noise ratio and storage density of optical storage media.