光学学报, 2002, 22 (10): 1263, 网络出版: 2006-08-08
连续波CO2激光辅助AuGeNi-InP合金
AuGeNi-InP Laser Assisted Aalloying Using CW CO2 Laser
摘要
利用激光辅助合金的方法,生成InP表面AuGeNi-InP合金,并形成良好的欧姆接触,上下表面面间电阻为5.8 Ω.研究了合金工艺参量(如合金时间、合金温度、镀膜厚度等)对形成欧姆接触性能的影响.
Abstract
AuGeNi InP alloy on InP chip and good ohmic contact have been fabricated by means of laser assisted alloying. The minimum contact resistance between the two surfaces of InP substrate is as low as 5.8 Ω. According to the experimental result, influence of some important processing parameters (as alloying time, alloying temperature, the thickness of film, et al.) on ohmic contact are discussed.
叶玉堂, 吴云峰, 吴泽明, 杨先明, 范超, 秦宇伟, 方勇文, 郑华, 李莹波. 连续波CO2激光辅助AuGeNi-InP合金[J]. 光学学报, 2002, 22(10): 1263. 叶玉堂, 吴云峰, 吴泽明, 杨先明, 范超, 秦宇伟, 方勇文, 郑华, 李莹波. AuGeNi-InP Laser Assisted Aalloying Using CW CO2 Laser[J]. Acta Optica Sinica, 2002, 22(10): 1263.