在室温下,用激光烧蚀石墨靶方法在单晶硅衬底表面沉积了不同厚度的非晶碳膜.对膜进行了表面形貌观察,测试并分析了膜的拉曼散射光谱和傅里叶变换红外光谱.发现膜含微晶石墨杂质较少,观察到1200 cm-1附近的非晶金刚石拉曼峰,膜层在红外的光透过率高,在硅衬底上适宜于制作波长短于8μm的红外增透膜.

Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature. Morphology was observed with scanning electron microscope (SEM). Raman scattering spectroscopy and Fourier transform infrared spectroscopy (FTIR) were analysised. It is found that these films had little of graphet micro crystaline in their matrix. A Raman peak for amorphic diamond was found around 1200 cm -1 . These films were transparent in infrared and suit for antireflective film deposited on silicon in the range of wavelength short than 8 μm.