以Ag-In-Te-Sb合金靶采用射频反应溅射在不同氧分压下制备了单层Ag-In-Te-Sb-O薄膜。对薄膜的反射光谱及光学常数(n，k)的研究结果表明:在分压比PO2/PAr=2%～4%时制备的薄膜反射率较高，氩气保护下在300℃退火30min后，在500～700nm波长范围薄膜反射率增长可达17%～25%；分压比PO2/PAr=2%时，薄膜在400～650nm波长范围有较强吸收，光学常数在退火前后也有较大差别。对薄膜静态记录性能的测试结果表明:记录功率为10mW，脉宽为100ns时，薄膜在记录前后反射率对比度高达20%,具有良好写入灵敏性。连续多次进行写入/擦除循环，擦除前后反射率对比度稳定，薄膜具有一定的可擦除性能。退火前后薄膜的X射线衍射(XRD)结果说明退火后薄膜中仅有Sb的晶相，与Ag-In-Te-Sb薄膜的结晶特性明显不同。薄膜的成分及各元素的化学状态用光电子能谱(XPS)进行了分析。这类薄膜有望作为短波长高密度光存储材料。

Monolayer Ag In Te Sb O thin films were deposited by reactive RF sputtering using Ag In Te Sb alloy target in a mixture of argon oxygen plasma with different ratio of oxygen to argon. The reflectance spectra and optical constants of the films were studied. It was found that films deposited at P O 2 /P Ar  of 2%～4% had comparatively large reflectivity, after annealing at 300℃ under protection of argon for 30 minutes, the reflectivity in the wavelength range of 500～700 nm could rise by about 17%～25%; Film deposited at P O 2 /P Ar  of 2% had large absorption in the wavelength range of 400～650 nm, the optical constants (n,k) also changed much after annealing. The reflectivity contrast can be as high as 20% after being recorded using short wavelength laser (514 4 nm) with low power (10 mW) and short pulse width (100 ns). The films had good writing sensitivity and certain erasability. The XRD analyses indicated that only Sb crystal formed after annealing, as was different to crystallization characters of Ag-In-Te-Sb films. Components and chemical states of the filmwerean alyzed by XPS. This kind of films had the potential fo rusein high density optical storage.