中国激光, 2004, 31 (2): 129, 网络出版: 2006-06-12
钨丝掩模二次倾斜离子注入850 nm室温连续垂直腔面发射激光器
Room Temperature CW 850 nm Vertical Cavity Surface Emitting Lasers Fabricated by Tilt Ion Implanting Using Tungsten Wires as Mask
激光技术 钨丝掩模 离子注入 垂直腔面发射激光器 laser technique tungsten wires as mask ion implanted vertical cavity surface emitting lasers
摘要
采用钨丝做掩模,进行倾斜的离子注入优化电流限制区,制作出室温连续的垂直腔面发射激光器件.该器件的最低阈值电流为1.4 mA,串联电阻约207 Ω, 输出光功率超过1 mW.
Abstract
Room temperature CW vertical cavity surface emitting lasers were fabricated by tilt ion implanting and optimizing ion distribution around the active region. The device, whose threshold current was as low as 1.4 mA, gives the maximum more than 1 mW light power.
王海嵩, 杜国同, 崔宏峰, 许呈栋, 宋俊峰, 杜云, 陈弘达, 吴荣汉. 钨丝掩模二次倾斜离子注入850 nm室温连续垂直腔面发射激光器[J]. 中国激光, 2004, 31(2): 129. 王海嵩, 杜国同, 崔宏峰, 许呈栋, 宋俊峰, 杜云, 陈弘达, 吴荣汉. Room Temperature CW 850 nm Vertical Cavity Surface Emitting Lasers Fabricated by Tilt Ion Implanting Using Tungsten Wires as Mask[J]. Chinese Journal of Lasers, 2004, 31(2): 129.
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