激光与光电子学进展, 2003, 40 (3): 43, 网络出版: 2006-06-27
900nm高功率半导体激光器线阵列
900nm High Output Power Semiconductor Laser Linear Array
金属有机化合物气相淀积(MOCVD) 半导体激光器阵列 分别限制结构 单量子阱 metal organic chemical vapor deposition (MOCVD) semiconductor laser linear array separated confinement heterostructure single quantum well
摘要
利用金属有机化合物气相淀积(MOCVD)技术生长了InGaAs/GaAs分别限制应变单量子阱激光器工作物质.利用它制成半导体激光器线阵列,其峰值波长为900nm,光谱半高全宽小于4nm,在脉宽1000μs、13Hz的输入电流抽运下,输出峰值功率接近60W(室温,电流87A),斜率效率为0.64W/A.
Abstract
InGaAs/GaAs separated confinement heterostructure strained single quantum well materials was grown by the technology of metal organic chemical vapor deposition (MOCVD). The peak wavelength of the semiconductor laser linear array is 900nm, the full width at half maximum (FWHM) smaller than 4 nm, the peak output power near 60W (1000us, 13Hz, drive current 87A), and the slope efficiency is 0.6W/A.
辛国锋, 冯荣珠, 陈国鹰, 花吉珍. 900nm高功率半导体激光器线阵列[J]. 激光与光电子学进展, 2003, 40(3): 43. 辛国锋, 冯荣珠, 陈国鹰, 花吉珍. 900nm High Output Power Semiconductor Laser Linear Array[J]. Laser & Optoelectronics Progress, 2003, 40(3): 43.