光学学报, 2004, 24 (3): 397, 网络出版: 2006-06-12   

溶胶凝胶法制备SiO2基片Er3+∶Al2O3光学薄膜

Er3+∶Al2O3 Optical Films on SiO2 Substrate Prepared by the Sol-Gel Method
作者单位
1 大连理工大学材料工程系表面工程研究室, 大连 116024
2 大连铁道学院材料科学与工程系,大连116028
摘要
用溶胶凝胶法在SiO2基片上提拉制备了掺Er3+∶Al2O3光学薄膜。采用扫描电子显微镜、原子力显微镜、差热热重分析仪、X射线衍射仪研究了掺Er3+∶Al2O3光学薄膜的形貌和结构特性。在900 ℃烧结后,SiO2基片上提拉15次形成厚度8 μm掺摩尔比0.01 Er3+的面心立方结构γ-Al2O3薄膜具有明显(110)择优取向,掺摩尔比0.01 Er3+对γ-Al2O3的晶体结构和结晶生长过程未产生显著影响。薄膜具有均匀多孔结构,平均粒径为30~100 nm,平均孔径为50~100 nm,表面起伏度为10~20 nm。掺摩尔比0.01 Er3+∶γ-Al2O3薄膜,获得了中心波长为1.534 μm(半峰全宽为36 nm)的光致发光谱。
Abstract
The Er3+-doped Al2O3 optical films have been prepared on SiO2 substrate by the sol-gel method and the dip-coating process, using the aluminium isopropoxide [Al(OC3H7)3]-derived Al2O3 sols with the addition of erbium nitrate [Er(NO3)3?5H2O]. The surface morphology and structure of the 0.01 (mole ratio, ibid below) Er3+-doped Al2O3 film have been analysed by the scanning electron microscope (SEM), atomic force microscope (AFM), differential thermal analysis-thermogravimetric analysis (DTA-TG), and X-ray diffractometer (XRD). The 0.01 Er3+-doped γ-Al2O3 film with a thickness of 8 μm through 15 dipping coating cycles, which possesses a face-centered cubic lattice with a (110) preferred orientation, is obtained from 0.01 Er3+-doped γ-AlOOH gel sintered at 900 ℃. The addition of 0.01 Er3+ in the γ-Al2O3 has no evident influence on the phase structure and preferred orientation of the film. The homogenous and porous 0.01 Er3+-doped γ-Al2O3 film has a crystal size of 30~100 nm, a pore size of 50~100 nm, and a surface roughness of 10~20 nm. The photoluminescence (PL) spectrum centered at 1.533 μm with the full width at half maximum of 36 nm is observed for the 0.01 Er3+-doped γ-Al2O3 film, which is attributed to the intra-4f transition between the first excited (4I13/2) and the ground state (4I15/2) of Er3+.

王兴军, 杨涛, 王晶, 雷明凯. 溶胶凝胶法制备SiO2基片Er3+∶Al2O3光学薄膜[J]. 光学学报, 2004, 24(3): 397. 王兴军, 杨涛, 王晶, 雷明凯. Er3+∶Al2O3 Optical Films on SiO2 Substrate Prepared by the Sol-Gel Method[J]. Acta Optica Sinica, 2004, 24(3): 397.

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