光学学报, 2004, 24 (4): 437, 网络出版: 2006-06-12
ZrO2薄膜残余应力实验研究
Study of Residual Stress in ZrO2 Thin Films
薄膜物理 残余应力 ZrO2薄膜 沉积温度 沉积速率 thin film physics residual stress ZrO2 films deposition temperature deposition rate
摘要
采用ZYGO MarkⅢ-GPI数字波面干涉仪对电子束蒸发方法制备的ZrO2薄膜中的残余应力进行了研究,讨论了沉积温度、沉积速率等工艺参量对ZrO2薄膜残余应力的影响。实验结果表明
Abstract
The residual stress in ZrO2 films prepared by electron beam evaporation was measured by viewing the substrate deflection using an optical interference method. The influence of deposition temperatures and deposition rates on the residual stress was studied. The results show that residual stress in ZrO2 films changes from tensile to compressive with the increase of deposition temperature and deposition rate and the value of the compressive stress increase with the increase of deposition temperature. At the same time, the microstructure of the ZrO2 films was inspected by X-ray diffraction (XRD). The relationship between the residual stress and the microstructure was also discussed.
邵淑英, 范正修, 范瑞瑛, 邵建达. ZrO2薄膜残余应力实验研究[J]. 光学学报, 2004, 24(4): 437. 邵淑英, 范正修, 范瑞瑛, 邵建达. Study of Residual Stress in ZrO2 Thin Films[J]. Acta Optica Sinica, 2004, 24(4): 437.