光学学报, 2004, 24 (4): 437, 网络出版: 2006-06-12   

ZrO2薄膜残余应力实验研究

Study of Residual Stress in ZrO2 Thin Films
作者单位
中国科学院上海光学精密机械研究所光学薄膜技术研究与发展中心, 上海 201800
摘要
采用ZYGO MarkⅢ-GPI数字波面干涉仪对电子束蒸发方法制备的ZrO2薄膜中的残余应力进行了研究,讨论了沉积温度、沉积速率等工艺参量对ZrO2薄膜残余应力的影响。实验结果表明
Abstract
The residual stress in ZrO2 films prepared by electron beam evaporation was measured by viewing the substrate deflection using an optical interference method. The influence of deposition temperatures and deposition rates on the residual stress was studied. The results show that residual stress in ZrO2 films changes from tensile to compressive with the increase of deposition temperature and deposition rate and the value of the compressive stress increase with the increase of deposition temperature. At the same time, the microstructure of the ZrO2 films was inspected by X-ray diffraction (XRD). The relationship between the residual stress and the microstructure was also discussed.

邵淑英, 范正修, 范瑞瑛, 邵建达. ZrO2薄膜残余应力实验研究[J]. 光学学报, 2004, 24(4): 437. 邵淑英, 范正修, 范瑞瑛, 邵建达. Study of Residual Stress in ZrO2 Thin Films[J]. Acta Optica Sinica, 2004, 24(4): 437.

本文已被 11 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!