激光与光电子学进展, 2006, 43 (2): 3, 网络出版: 2006-04-20
大功率半导体激光器的最新进展 下载: 708次
New Development of High Power Semiconductor Laser
摘要
围绕美国**先进技术研究计划署(Defense Advanced Research Projects Agency)的**项目——超高效率激光器光源(SHEDS),分析了半导体激光器的损耗机制,从降低半导体激光器电压压降、减小内建电压、减小损耗、优化半导体激光器结构以及横向布拉格谐振腔等方面阐述了提高半导体激光器效率和输出功率的途径,介绍了稳定半导体激光器激射波长的一些技术方法。
Abstract
Surrounding the U.S.A. Defense Advanced Research Projects Agency′s military project of Super High Efficiency Diodes, the wasting mechanism of the semiconductor laser was analyzed, the approach for improving the high semiconductor laser′ wall plug efficiency and the output power was expounded from lowering the voltage, reducing the built-in voltage, minishing the loss, optimizing the semiconductor laser′s structure and transverse Bragg resonance cavity. And some techno-methods of stabilizing the stimulated wavelength of semiconductor laser were introduced.
辛国锋, 瞿荣辉, 方祖捷, 陈高庭. 大功率半导体激光器的最新进展[J]. 激光与光电子学进展, 2006, 43(2): 3. 辛国锋, 瞿荣辉, 方祖捷, 陈高庭. New Development of High Power Semiconductor Laser[J]. Laser & Optoelectronics Progress, 2006, 43(2): 3.