中国激光, 2006, 33 (suppl): 435, 网络出版: 2006-04-21
980 nm大功率半导体激光治疗仪的设计
Design of 980 nm High-Power Semiconductor Laser Therapeutic Equipment
医用光学与生物技术 半导体激光器 恒流源电路 吸收能力 medical optics and biotechnology semiconductor laser constant-current source circuit absorbency
摘要
设计了一种大功率半导体激光治疗仪的光路、电流源及保护电路和恒温控制单元。采用输出波长为980 nm的InGaAs大功率半导体激光器作为激光治疗仪的有效光源,用670 nm半导体激光作为瞄准光束,对GaAlAs,InGaAs和Nd:YAG三种激光在医学上不同效果进行比较分析,仪器最大功率为3 W,具有输出功率高、体积小、寿命长等优点。在肿瘤、耳鼻喉科以及妇科方面都有很好的应用前景。
Abstract
A kind of which includes high-power semiconductor laser therapeutic equipment is designed beam path, current source and protective circuit and constant temperature control unit. By comparing and analyzing the effects of GaAlAs, InGaAs and Nd:YAG lasers in medicine, InGaAs high-power semiconductor laser therapeutic equipment with output wavelength at 980 nm is used as effective light source, 670 nm semiconductor laser as aiming beam. This equipment has the highest power of 3 W, with such virtues as high output power, small volume and long life span, and has a very good prospect of application to tumor, ear-nose-throat department and gynecology.
单肖楠, 张晶, 王立军. 980 nm大功率半导体激光治疗仪的设计[J]. 中国激光, 2006, 33(suppl): 435. 单肖楠, 张晶, 王立军. Design of 980 nm High-Power Semiconductor Laser Therapeutic Equipment[J]. Chinese Journal of Lasers, 2006, 33(suppl): 435.
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