研制具有网格或条状图形的Si刻蚀膜靶,用于XUV系统中像传递函数的研究.在自截止腐蚀工艺制备Si平面薄膜的基础上,结合离子束刻蚀工艺,获得刻蚀深度为1.0 μm左右,网格尺寸为25 μm×25 μm,或条状线宽为5 μm的Si刻蚀膜;测量了Si刻蚀膜的形貌和刻蚀深度;研究了离子束刻蚀参数对图形形貌的影响.并介绍采用两种靶型获得的像传递函数信息.

The image transfer function is used to judge the precision of XUV radiography system and silicon grating foils are prepared to measure the image transfer function. Using photoetching and ion beam etching processes, the silicon grating foils with check and stripe pattern were prepared on thin silicon foil. The thickness of thin silicon foil was 3 to 4 μm and the pattern's etching depth was about 1 μm. The size of check pattern was 25 μm×25 μm and the width of stripe pattern was 5 μm. The parameters of photoetching and ion beam etching processes were studied to control the precision of patterns. And silicon grating foils were used to measure the image transfer function by XUV radiography system on "Shenguang Ⅱ" high power laser facility in 2000.