针对基于SOS脉冲功率源S-5N的输出特点,利用PIC数值模拟软件,为S-5N设计了能够工作在低引导磁场条件下的无箔二极管系统,并在S-5N脉冲功率源上进行了低引导磁场环形强流电子束产生的实验研究.在引导磁场为0.5 T条件下,无箔二极管电流输出波形近似为梯形波,脉冲上升沿约9 ns,平顶部分约26 ns,二极管电压420 kV,电流2.7 kA,束斑平均半径约16 mm,具有良好的均匀性.

An experimental system of foilless diode operating in low guiding magnetic field was designed on the pulsed power generator S-5N. In the experiment, a trapezium-shape wavefrom was obtained with a rise time of about 9 ns and a flat top of about 26 ns when magnetic field strength was 0.5 T. The diode voltage was 420 kV and the current was 2.7 kA. The average radius of the beam spot was 16 mm. There was a good agreement between the design and experimental results. It was observed that the diode impedance increases following the guiding magnetic field until it reaches a turning point.