利用电子顺磁共振(EPR)谱和透射电子显微镜(TEM)研究了YSZ单晶的辐照效应.200keV的Xe和400keV的Cs离子注入[111]取向的YSZ单晶中,注量均为5×10¹⁶cm^-2.EPR结果表明辐照产生了共振吸收位置g‖=1.989 和 g⊥=1.869、对称轴为［111］的六配位Zr³⁺顺磁缺陷。Cs辐照产生了比Xe 离子辐照多约150倍的六配位Zr³⁺顺磁缺陷。两种样品的剖面电子显微分析表明没有发现非晶化转变，但是Cs离子辐照的样品在损伤集中区域产生了密度较高的缺陷。因此，EPR谱和电子显微观察均说明在相同离位损伤(约160 dpa)的情况下，Cs离子辐照比Xe 离子辐照产生了更多的缺陷。造成这一现象的原因是Cs离子是化学活性的而Xe 离子却是惰性的.

Electron paramagnetic resonance(EPR) and cross-sectional transmission electron microscopy were used to study defect structure and radiated damage mechanism.Single crystal samples of cubic zirconia stabilized by 9.5 mol.% Y₂O₃(YSZ) were implanted with 200 keV Xe ions and 400 keV Cs ions up to a dose of 5×10¹⁶ cm^-2,respectively.EPR spectra show the trigonal signal with g‖=1.989 and g⊥=1.869, which exhibites axial symmetry with ［111］ direction as symmetry axis composed of sixfold-coordinated Zr³⁺ sites. Peak-to-peak intensity (per unit volume) of Cs-ion irradiated YSZ is as about 150 time as that of Xe-ion irradiated YSZ, which indicates that the concentration of sixfold-coordinated Zr³⁺ defects produced by Cs-ion irradiation is far more than that of Xe-ion irradiated.The cross-sectional images of the irradiated samples show that the Cs-ion irradiation in YSZ produced more defect clusters than Xe-ion irradiation.