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基于VO2薄膜非致冷红外探测器性能研究

CHARACTERIZATION OF UNCOOLED VO2-BASED THIN FILMS BOLOMETER CHEN Chang-Hong(Department of Optoelectronic

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摘要

用微电子工艺制备了VO2溅射薄膜红外探测器,在296K的环境温度中测试了该探测器对8-12μm红外辐射的黑体响应率和噪声电压,结果显示该探测器在调制频率为30Hz时可以实现探测率D*=1.89×108cmHz1/2W-1,热时间常数τ=0.011s的非致冷红外探测.

Abstract

An uncooled bolometer based on VO2 thin films deposited by reactive ion-beam sputtering was fabricated. The noise and responsivity for the spectral range 8-12μm were measured at 296K. At the chopper frequency of 30Hz, the device having a detectivity D* of 1.89×108cmHz1/2W-1and a thermal time constant of 0.011s was realized.

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中图分类号:TN21

所属栏目:研究简报

基金项目:国家高技术863基金资助项目

收稿日期:2000-06-06

修改稿日期:2000-11-05

网络出版日期:2001-04-01

作者单位    点击查看

陈长虹:华中科技大学光电工程系,湖北,武汉,430074
易新建:华中科技大学光电工程系,湖北,武汉,430074
张静:华中科技大学光电工程系,湖北,武汉,430074
熊笔峰:华中科技大学光电工程系,湖北,武汉,430074

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【5】Sedky S,Fiorini P,Baert K,et al. Characterization and optimization of infrared poly SiGe bolometers.IEEE Trans. Electron Devices,1999,46: 675—681

引用该论文

陈长虹,易新建,张静,熊笔峰. CHARACTERIZATION OF UNCOOLED VO2-BASED THIN FILMS BOLOMETER CHEN Chang-Hong(Department of Optoelectronic[J]. Journal of Infrared and Millimeter Waves, 2001, 20(2): 136-138

陈长虹,易新建,张静,熊笔峰. 基于VO2薄膜非致冷红外探测器性能研究[J]. 红外与毫米波学报, 2001, 20(2): 136-138

被引情况

【1】梁继然,胡明,王晓东,李贵柯,阚强,季安,杨富华,刘剑,吴南健,陈弘达. 纳米二氧化钒薄膜的电学与光学相变特性. 光谱学与光谱分析, 2010, 30(4): 1002-1007

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