红外与毫米波学报, 2001, 20 (6): 406, 网络出版: 2006-05-10
分子束外延HgCdTe表面缺陷研究
SURFACE DEFECTS ON MBE GROWN HgCdTe
摘要
采用GaAs作为衬底研究了HgCdTe MBE薄膜的表面缺陷.借助SEM分析了不同缺陷的成核机制,确定了获得良好表面形貌所需的最佳生长条件.发现HgCdTe外延生长条件、衬底表面处理等因素与外延层表面各种缺陷有关.获得的外延层表面缺陷(尺寸大于2 μm)平均密度为300 cm-2,筛选合格率为65%.
Abstract
The surface defects on MBE grown HgCdTe films on GaAs substrates were studied. The mechanism of surface defect formation was analyzed by SEM observations. The optimal growth conditions for obtaining a good morphological surface were determined. It was found that a variety of surface defects on epilayers are related to the HgCdTe growth conditions and the substrate surface treatment. The average density of surface defects (larger than 2 μm) for HgCdTe epilayers was obtained to be 300 cm -2 , and the yield was 65%.
陈路, 巫艳, 于梅芳, 王善力, 乔怡敏, 何力. 分子束外延HgCdTe表面缺陷研究[J]. 红外与毫米波学报, 2001, 20(6): 406. 陈路, 巫艳, 于梅芳, 王善力, 乔怡敏, 何力. SURFACE DEFECTS ON MBE GROWN HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2001, 20(6): 406.
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