红外与毫米波学报, 2002, 21 (5): 332, 网络出版: 2006-05-10  

高组分稀磁半导体Cd1-xMnxTe/CdTe超晶格的光调制反射谱研究

STUDY OF PHOTOREFLECTANCE SPECTROSCOPY IN SEMICONDUCTOR Cd1-xMnxTe/CdTe SUPERLATTICES WITH HIGH COMPOSITIONS
作者单位
1 北京大学物理系,100871,北京
2 复旦大学应用表面物理实验室,200433,上海
3 INFM-Dipartimento di Fisica"A.olta"dell' Universitià di Pavia, I-27100 Pavia, Italy
4 INF-Dipartimento di Fisica"A.Volta"dell' Universitià di Pavia, I-27100 Pavia, Italy
5 INFM-Dipartimento di Fisica".Volta"dell' Universitià di Pavia, I-27100 Pavia, Italy
6 INFM-Dipartimento di cienza dei Materiali, Università di Milano Bicocca, 20125 Milano, Italy
摘要
报道用分子束外延(MEB)技术生长的x=0.4,0.8的高组分稀磁半导体Cd1-xMnxTe/ CdTe超晶格的光调制反射谱在室温和液氮下的实验结果.观测到11H,22H,33H和11L等激子跃迁结构,计及子能级的量子限定效应和晶格失配导致的应力效应,对子能级结构进行了计算,除x=0.8样品的33H能量计算值与实验值有较大偏差外,实验结果与理论符合得很好.还与光致发光谱实验结果进行了比较.
Abstract
Photoreflectance spectra of Cd 1- x Mn x Te?CdTe superlattices with high compositions x =0.4,0.8 were carried out at room temperature and liquid nitrogen temperature. The samples were grown by molecular beam epitaxy (MBE) technique. Exciton transitions of heavy and light holes related to 11H,22H,33H and 11L were observed. After taking into consideration the strain induced and quantum confinement effects, the theoretical calculations are in very good agreement with our photo reflectance measurement results except 33H of x =0.8. Photoluminescence spectra were also performed at room temperature and low temperature in order to compare with our photoreflectance results.

陈辰嘉, 王学忠, 梁晓甘, 李海涛, 凌震, 王迅, V Bellani, M Geddo, A Stella, S Tavazzi, A Borghesi, A Sassella. 高组分稀磁半导体Cd1-xMnxTe/CdTe超晶格的光调制反射谱研究[J]. 红外与毫米波学报, 2002, 21(5): 332. 陈辰嘉, 王学忠, 梁晓甘, 李海涛, 凌震, 王迅, V Bellani, M Geddo, A Stella, S Tavazzi, A Borghesi, A Sassella. STUDY OF PHOTOREFLECTANCE SPECTROSCOPY IN SEMICONDUCTOR Cd1-xMnxTe/CdTe SUPERLATTICES WITH HIGH COMPOSITIONS[J]. Journal of Infrared and Millimeter Waves, 2002, 21(5): 332.

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