红外与毫米波学报, 2003, 22 (5): 349, 网络出版: 2006-05-10
MgZnO和ZnO晶体薄膜紫外发光特性比较
COMPARISON OF ULTRAVIOLET PHOTOLUMINESCENCE CHARACTERISTICS BETWEEN MgZnO AND ZnO THIN FILMS
六方ZnO晶体薄膜 立方MgZnO晶体薄膜 紫外光致荧光谱(UVPL) X-射线光电子能谱(XPS). wurtzite ZnO film cubic MgZnO film UV-Photoluminescence XPS.
摘要
用电子束蒸发反应沉积在Si(111)衬底上低温生长了立方MgZnO薄膜和高度C-轴取向的ZnO薄膜.X-射线光电子能谱(XPS)结果表明,立方MgZnO薄膜中的Mg含量比靶源中的高.紫外光致荧光谱(UVPL)测试显示,与ZnO相比MgZnO的荧光峰从393nm蓝移至373nm,这可能与MgZnO的带隙变宽有关.对ZnO薄膜的研究还发现,生长过程中充O2与否对ZnO发光特性的影响显著,不充O2时样品的紫外荧光峰较之充O2条件下制得的样品发生红移.
Abstract
Low temperature epitaxy of wurtzite ZnO and cubic MgZnO films is achieved on Si(111) by reactive electron beam evaporation. Mg content in MgZnO film is measured by X ray photoelectron spectroscopy and is larger than that in the evaporation source. Ultraviolet photoluminescence (UVPL) measurements show the emission peak of ZnO is at 393nm, while the peak of MaZnO is at 373nm. It is found that the UVPL peak of ZnO film grown under no O 2 environment is red shifted compared with that of ZnO film grown in the reaction chamber with additional O 2.
陈奶波, 邱东江, 吴惠桢, 张寒洁, 鲍世宁, 何丕模. MgZnO和ZnO晶体薄膜紫外发光特性比较[J]. 红外与毫米波学报, 2003, 22(5): 349. 陈奶波, 邱东江, 吴惠桢, 张寒洁, 鲍世宁, 何丕模. COMPARISON OF ULTRAVIOLET PHOTOLUMINESCENCE CHARACTERISTICS BETWEEN MgZnO AND ZnO THIN FILMS[J]. Journal of Infrared and Millimeter Waves, 2003, 22(5): 349.
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