用射频磁控反应溅射在石英玻璃和硅片上沉积氧化钒薄膜.利用X射线衍射,X射线光电子谱,原子力显微镜,分光光度计和电阻测量手段对沉积薄膜结构、形貌和性能进行了测试.结果表明,沉积薄膜的电阻温度系数大于1.8%/℃,方块电阻为22±5kΩ/□.

Vanadium oxide thin films were deposited onto quartz glass and silicon substrates by radio frequency reactive sputtering methods. The surface morphology, structural features and properties of films were studied by X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS), atomic force spectroscopy(AFM), spectrophotometer and resistance measurement methods to ensure the growth of the deposited films. These investigation shown that the deposited thin film has TCR value over 1.8% per degree centigrade and square resistance of 22±5kΩ/□.