红外与毫米波学报, 2004, 23 (2): 99, 网络出版: 2006-05-10
128元非致冷氧化钒红外探测器的制作
Fabrication of 128-element uncooled VOx thermal IR detectors
红外探测器 微桥结构 微桥阵列 非致冷 氧化钒薄膜 IR detectors microbridge structure microbridge arrays uncooled vanadium oxides thin film
摘要
采用新工艺在氮化硅衬底上制备了室温时电阻温度系数为-0.021K-1的氧化钒薄膜,以此为基础,利用光刻和反应离子刻蚀工艺在硅衬底上制作了128元氧化钒红外探测器.为了降低探测器敏感元与衬底间的热导,设计制作了自支撑的微桥结构阵列.测试结果显示探测器的响应率和探测率在8～12μm的长波红外波段处分别达到104V/W和2×108cmHz1/2W-1.
Abstract
A new method fabricating Vanadium oxides thin films on Si 3N 4 substrates has been completed, and the temperature coefficient resistance of the thin film has been found to be -0.021K -1 at room temperature. Based on the method, 128 element linear uncooled infrared detector arrays are fabricated utilizing pattern and reactive ion etching process. Self supporting microbridge array has also been designed and fabricated to reduce the thermal conductance between the active area of detectors and the silicon substrate. Test indicates the responsivity and detectivity of detectors approaching 10 4V/W and 2×10 8cm Hz1/2 W-1 in 8～12μm IR radiation band, respectively.
王宏臣, 易新建, 陈四海, 黄光, 肖静. 128元非致冷氧化钒红外探测器的制作[J]. 红外与毫米波学报, 2004, 23(2): 99. 王宏臣, 易新建, 陈四海, 黄光, 肖静. Fabrication of 128-element uncooled VOx thermal IR detectors[J]. Journal of Infrared and Millimeter Waves, 2004, 23(2): 99.
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