红外与毫米波学报, 2004, 23 (4): 313, 网络出版: 2006-05-10
溅射沉积功率对PZT薄膜的组分、结构和性能的影响
INFLUENCE OF DEPOSITION POWER ON THE COMPOSITION,STRUCTURE AND PROPERTIES OF PZT THIN FILMS PREPARED BY RF SPUTTERING
射频溅射 沉积功率 钙钛矿结构 铁电薄膜 RF sputtering deposition power perovskite phase PZT PZT ferroelectric thin films
摘要
用射频(RF)溅射法在镀LaNiO3(LNO)底电极的Si片上沉积PbZr0.52Ti0.48O3(PZT)铁电薄膜,沉积过程中基底温度为370℃,然后在大气环境中对沉积的PZT薄膜样品进行快速热退火处理(650℃,5min).用电感耦合等离子体发射光谱(ICP-AES)测量其组分,X射线衍射(XRD)分析PZT薄膜的结晶结构和取向,扫描电子显微镜(SEM)分析薄膜的表面形貌和微结果,RT66A标准铁电综合测试系统分析Pt/PZT/LNO电容器的铁电与介质特性,结果表明,PZT薄膜的组分、结构和性能都与溅射沉积功率有关.
Abstract
PbZr0.52Ti0.48O3(PZT) ferroelectric thin films were deposited on LaNiO3 coated p-Si(111) substrates by RF magnetron sputtering at low substrate temperature( T =370℃) with deposition power ranging from 60W to 120W, sequentially followed by a rapid thermal annealing(RTA) process at temperature 650℃ for 5 minutes. The crystalline phase, microstructure, composition, and electrical properties of PZT thin films were investigated by X-ray diffraction(XRD), canning electron microscope(SEM), inductively coupled plasma-atom emission spectrometry (ICP-AES), four-probe meter and spectro-ellipsometer, respectively. It is found that the microstructure, composition and electrical properties of sputtered PZT thin films are highly dependent on the deposition power, i.e., the atom rate Pb(Zr+Ti) of PZT films and the leak-current of Pt/PZT/LNO capacitors increase as the deposition power increases, films deposited at low power are Pb-poor and present nonferroelectricity, while those deposited at high power are Pb-rich.Optimized deposition power is 80W.
李新曦, 赖珍荃, 王根水, 孙璟兰, 赵强, 褚君浩. 溅射沉积功率对PZT薄膜的组分、结构和性能的影响[J]. 红外与毫米波学报, 2004, 23(4): 313. 李新曦, 赖珍荃, 王根水, 孙璟兰, 赵强, 褚君浩. INFLUENCE OF DEPOSITION POWER ON THE COMPOSITION,STRUCTURE AND PROPERTIES OF PZT THIN FILMS PREPARED BY RF SPUTTERING[J]. Journal of Infrared and Millimeter Waves, 2004, 23(4): 313.