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溅射沉积功率对PZT薄膜的组分、结构和性能的影响

INFLUENCE OF DEPOSITION POWER ON THE COMPOSITION,STRUCTURE AND PROPERTIES OF PZT THIN FILMS PREPARED BY RF SPUTTERING

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摘要

用射频(RF)溅射法在镀LaNiO3(LNO)底电极的Si片上沉积PbZr0.52Ti0.48O3(PZT)铁电薄膜,沉积过程中基底温度为370℃,然后在大气环境中对沉积的PZT薄膜样品进行快速热退火处理(650℃,5min).用电感耦合等离子体发射光谱(ICP-AES)测量其组分,X射线衍射(XRD)分析PZT薄膜的结晶结构和取向,扫描电子显微镜(SEM)分析薄膜的表面形貌和微结果,RT66A标准铁电综合测试系统分析Pt/PZT/LNO电容器的铁电与介质特性,结果表明,PZT薄膜的组分、结构和性能都与溅射沉积功率有关.

Abstract

PbZr0.52Ti0.48O3(PZT) ferroelectric thin films were deposited on LaNiO3 coated p-Si(111) substrates by RF magnetron sputtering at low substrate temperature( T =370℃) with deposition power ranging from 60W to 120W, sequentially followed by a rapid thermal annealing(RTA) process at temperature 650℃ for 5 minutes. The crystalline phase, microstructure, composition, and electrical properties of PZT thin films were investigated by X-ray diffraction(XRD), canning electron microscope(SEM), inductively coupled plasma-atom emission spectrometry (ICP-AES), four-probe meter and spectro-ellipsometer, respectively. It is found that the microstructure, composition and electrical properties of sputtered PZT thin films are highly dependent on the deposition power, i.e., the atom rate Pb(Zr+Ti) of PZT films and the leak-current of Pt/PZT/LNO capacitors increase as the deposition power increases, films deposited at low power are Pb-poor and present nonferroelectricity, while those deposited at high power are Pb-rich.Optimized deposition power is 80W.

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中图分类号:TB39;O484

所属栏目:研究简报

基金项目:上海市自然科学基金(00ZE14071);江西省自然科学基金资助项目(0150016)

收稿日期:2003-04-28

修改稿日期:2004-02-27

网络出版日期:2004-08-01

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李新曦:南昌大学,物理系,江西,南昌,330047
赖珍荃:南昌大学,物理系,江西,南昌,330047
王根水:中国科学院上海技术物理研究所,红外物理国家重点实验室,上海,200083
孙璟兰:中国科学院上海技术物理研究所,红外物理国家重点实验室,上海,200083
赵强:中国科学院上海技术物理研究所,红外物理国家重点实验室,上海,200083
褚君浩:中国科学院上海技术物理研究所,红外物理国家重点实验室,上海,200083

备注:李新曦(1971-),男,湖北荆州人,硕士生,主要从事光电子材料研究.

【1】Hong J G, Song H W, Lee H C. et al. Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt films[J]. J.Appl.Phys., 2001, 90(4): 1962-1967.

【2】Huang Z, Zhang Q, Whatmore R W. Low temperature crystallization of lead zirconate titanate thin films by a sol-gel method[J]. J.Appl.Phys., 1999, 85: 7355-7359.

【3】Mark K, Soyama N, Mori S. et al. Lowing of crystallization temperature of sol-gel derived Pb(Zr,Ti)O3 thin films[J]. Integrated Ferroelectrics, 2000, 30: 193-202.

【4】Ikarashi N. Analytaical transmission electron microscopy of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 on a Pt electrodes[J]. Appl.Phys.Lett., 1998, 73(14): 1955-1557.

【5】Kim T W, Yoon Y S. Microstructural and electrical properties of Pb(Zr0.52Ti0.48)O3 films grown on p-InSb(111) substrate at low temperatue[J]. J.Phys.and Chem.of Solids, 2000, 61: 529-535.

【6】Tseng Y K, Liu K S, Huang S F, et al. Improment on ferroelectric properties of metal-organic decomposited PZT thin film prepared by using prenucleation layer[J]. Integrated Ferroelectrics, 2000, 30: 157-164.

【7】Hwang K S, Manabe T, Nagahama T. et al. Effect of substrate material on the crystallinity and epitaxy of Pb(Zr,Ti)O3 thin films[J]. Thin Solid Films, 1999, 347: 106-111.

【8】Nagaraj N, Aggarwal S, Ramesh R. Influnce of contact electrodes on leakage characteristics in ferroelectric thin films[J]. J.Appl.Phys., 2001, 90(1): 375-382.

【9】Chen Ming-Sen, Wu Tai-Bor, Wu Jenn-Ming. Effect of textured LaNiO3 electrode on the fatigue improvement of Pb(Zr0.53Ti0.47)O3 thin films[J]. Appl.Phys.Lett., 1996, 68(10): 1430-1432.

【10】Chao G C, Wu J M. Leakage current and fatigue properties of Pb(Zr, Ti) O3 electrodes[J]. Jpn.J.Appl.Phys., 2001, 40(4A): 2417-2422.

【11】Meng X J, Cheng J G. Sun J L. et al. Growth of(100)-oriented LaNiO3 thin films directly on Si substrate by a simple metalorganic decomposition technique for the highly oriented PZT thin films[J]. J.Cryst.Growth, 2000, 220: 100-104.

引用该论文

李新曦,赖珍荃,王根水,孙璟兰,赵强,褚君浩. INFLUENCE OF DEPOSITION POWER ON THE COMPOSITION,STRUCTURE AND PROPERTIES OF PZT THIN FILMS PREPARED BY RF SPUTTERING[J]. Journal of Infrared and Millimeter Waves, 2004, 23(4): 313-316

李新曦,赖珍荃,王根水,孙璟兰,赵强,褚君浩. 溅射沉积功率对PZT薄膜的组分、结构和性能的影响[J]. 红外与毫米波学报, 2004, 23(4): 313-316

被引情况

【1】万尤宝,杨培志,吴宇容,袁国祥,李新曦,Rong-Min Kang. 组分离子浓度对铁电铌酸钾锂晶体Raman光谱的影响. 红外与毫米波学报, 2005, 24(5): 331-334

【2】钟朝位,汪红兵,彭家根,张树人,张万里. Pb(Zr0.3Ti0.7)O3热释电薄膜材料研究. 红外与毫米波学报, 2005, 24(6): 405-408

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