红外与毫米波学报, 2004, 23 (4): 317, 网络出版: 2006-05-10
隧道穿透对Sol-gel多晶二氧化钒薄膜电阻率的影响模拟
IFLUENCE OF GRAIN BOUNDARY TUNNELING ON THE RESISTIVITY OF THE VO2 FILMS PREPARED BY SOL-GEL METHOD
二氧化钒多晶薄膜 两相结构模型 隧道穿透 溶胶-凝胶法 VO2 polycrystalline film two phase model grain boundary tunneling sol-gel method
摘要
在多晶薄膜晶粒-晶界两相结构模型的基础上,考虑载流子对晶粒间界势垒区的隧穿机制,在10℃～100℃的温度范围内,模拟了Sol-gel多晶二氧化钒薄膜电阻率随温度的变化,模拟结果与实验结果有较好的吻合.模拟结果显示,二氧化钒多晶薄膜的晶界效应限制了薄膜相变时电阻率的变化,并使薄膜在金属相时呈现负的温度系数.
Abstract
Based on the model of the two phases of grain and grain boundary, the grain boundary tunneling of carriers was considered to simulate the change of the resistivtiy of VO2 polycrystalline film prepared by Sol-gel method in temperature range of 10℃～100℃.The simulation results were in good agreement with the experiment data. The results indicate that the grain boundary effect decreases the magnitude of resistivity change of VO2 film durying semiconductor-to-metal phase transition, and meanwhile the VO 2 film in metal phase has a negative temperature coefficient of resistivity.
袁宁一, 李金华, 李格. 隧道穿透对Sol-gel多晶二氧化钒薄膜电阻率的影响模拟[J]. 红外与毫米波学报, 2004, 23(4): 317. 袁宁一, 李金华, 李格. IFLUENCE OF GRAIN BOUNDARY TUNNELING ON THE RESISTIVITY OF THE VO2 FILMS PREPARED BY SOL-GEL METHOD[J]. Journal of Infrared and Millimeter Waves, 2004, 23(4): 317.
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