红外与毫米波学报, 2004, 23 (5): 329, 网络出版: 2006-05-10
掺杂InGaAs/InAlAs单量子阱中电子对称态和反对称态磁输运研究
MAGNETO-TRANSPORT OF ELECTRON SYMMETRIC AND ANTISYMMRTRIC STATES IN HIGHLY DOPED InGaAs/InAlAs SINGLE QUANTUM WELL
InGaAs/InAlAs量子阱 磁输运 对称态 反对称态 InGaAs/InAlAs quantum well magneto-transport symmetric state antisymmetric state
摘要
利用变温Hall测量研究了重掺杂InGaAs/InAlAs单量子阱中二维电子气,发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象.通过分析拍频节点位置,得到电子对称态和反对称态之间的能级间距为4meV.此外,通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系.
Abstract
Beating patterns in longitudinal resistance caused by the symmetric and antisymmetric states were observed in a heavily doped InGaAs/InAlAs quantum well by using variable temperature Hall measurement. The energy gap of symmetric and antisymmetric states is estimated to be 4meV from the analysis of beating node positions. In addition, the temperature dependences of the subband electron mobility and concentration were also studied from the mobility spectrum and multicarrier fitting procedure.
仇志军, 桂永胜, 崔利杰, 曾一平, 黄志明, 疏小舟, 戴宁, 郭少令, 禇君浩. 掺杂InGaAs/InAlAs单量子阱中电子对称态和反对称态磁输运研究[J]. 红外与毫米波学报, 2004, 23(5): 329. 仇志军, 桂永胜, 崔利杰, 曾一平, 黄志明, 疏小舟, 戴宁, 郭少令, 禇君浩. MAGNETO-TRANSPORT OF ELECTRON SYMMETRIC AND ANTISYMMRTRIC STATES IN HIGHLY DOPED InGaAs/InAlAs SINGLE QUANTUM WELL[J]. Journal of Infrared and Millimeter Waves, 2004, 23(5): 329.
PDF全文
