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Pb(Zrx,Ti1-x)O3成分梯度铁电薄膜的制备、结构及电性能表征

PREPARATION, STRUCTURE AND CHARACTERISTICS ON COMPOSITIONALLY GRADED Pb(Zrx,Ti1-x)O3 FERROELECTRIC THIN FILMS

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摘要

采用Sol-Gel方法,通过快速热处理,在Pt/Ti/SiO2/Si衬底上制备出Pb(Zrx,Ti1-x)O3成分梯度薄膜.经俄歇微探针能谱仪(AES)对制备的"上梯度"薄膜进行了成分深度分析,结果证实其成分梯度的存在.经XRD分析表明,制备的梯度薄膜为四方结构和三方结构的复合结构,但其晶面存在一定的结构畸变.经介电频谱测试表明,梯度薄膜的介电常数比每个单元的介电常数都大,但介电损耗相近.在10 kHz时,上、下梯度薄膜的介电常数分别为206和219.经不同偏压下电滞回线的测试表明,上、下梯度薄膜均表现出良好的铁电性质,其剩余极化强度Pr分别为24.3和26.8 μC·cm-2.经热释电性能测试表明,热释电系数随着温度的升高逐渐增加,室温下上、下梯度薄膜的热释电系数分别为5.78和4.61×10-8 C·cm-2K-1,高于每个单元的热释电系数.

Abstract

Compositionally graded Pb(Zrx,Ti1-x)O3 thin films were prepared on platinum-coated silicon substrates by Sol-Gel method and rapid heat-treatment. The composition depth profile of a typical up-graded film was determined by using a combination of auger electron spectroscopy and Ar ion etching. The results confirm that the processing method produces graded composition change. XRD analysis shows that the graded thin films possess the structure of tetragonal and rhombohedral. The dielectric constant of the graded thin films is higher than that of each thin film unit, but dielectric loss is near to each other. The dielectric constants of up-graded and down-graded thin films are 206 and 219 at 10 kHz, respectively. The hysteresis loops of the graded thin films show fine ferroelectric properties. The remanent polarizations of up-graded and down-graded thin films are 24.3 and 26.8 μC·cm~(-2), respectively. The pyroelectric coefficient of the graded thin films gradually increases with the temperature up, and is higher than that of each thin film unit. The pyroelectric coefficients of up-graded and down-graded thin films are 5. 78 and 4. 61 ×10 -8 C·cm-2 K-1 at room temperature, respectively.

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中图分类号:TM221

基金项目:国家重点基础研究发展计划资助项目(2002CB613304);江苏省自然科学基金项目(BK2005039)

收稿日期:2004-09-13

修改稿日期:2004-12-22

网络出版日期:2005-08-01

作者单位    点击查看

李建康:苏州科技学院,电子与信息工程系,江苏,苏州,215011
姚熹:西安交通大学,电子材料研究所,陕西,西安,710049

备注:李建康(1966-),男,山西运城人,副教授,博士,主要从事铁电薄膜材料与器件的研究.

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引用该论文

李建康,姚熹. PREPARATION, STRUCTURE AND CHARACTERISTICS ON COMPOSITIONALLY GRADED Pb(Zrx,Ti1-x)O3 FERROELECTRIC THIN FILMS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(4): 250-254

李建康,姚熹. Pb(Zrx,Ti1-x)O3成分梯度铁电薄膜的制备、结构及电性能表征[J]. 红外与毫米波学报, 2005, 24(4): 250-254

被引情况

【1】路朋献,许德合,马秋花,王改民,侯永改,周文俊,栗政新. 铬掺杂0.2PZN-0.8PZT压电陶瓷的XRD和Raman散射分析. 红外与毫米波学报, 2007, 26(1): 69-72

【2】林铁,孙璟兰,孟祥建,马建华,石富文,张晓东,汪琳,陈静,褚君浩. 用SiO2气凝胶做隔热层的铁电薄膜红外探测器性能与铁电薄膜层厚度的关系. 红外与毫米波学报, 2007, 26(5): 329-331

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