红外与毫米波学报, 2005, 24 (5): 378, 网络出版: 2006-05-10
电场对非对称半抛物量子阱中的子带内跃迁引起的线性与非线性折射率改变的影响
EFFECTS OF APPLIED ELECTRIC FIELDS ON LINEAR AND NONLINEAR INTERSUBBAND REFRACTIVE INDEX CHANGES IN SEMI-PARABOLIC QUANTUM WELLS
非线性光学 半抛物量子阱 密度矩阵方法 电场 折射率改变 nonlinear optics semi-parabolic quantum wells density matrix approach electric field refractive index changes
摘要
利用量子力学中密度矩阵及谐振子变换与数值求解相结合的方法,理论考察了带偏置电场的非对称半抛物量子阱中的子带内跃迁引起的线性与非线性折射率改变特性.以GaAs材料参数计算了总折射率改变对入射光的强度、半抛物量子阱受限势频率、外加直流电场强度的依赖关系.结果发现,总折射率改变敏感地依赖于这些因素.
Abstract
By using the compact density matrix approach and displacement harmonic variant and numerical calculation methods,the linear and nonlinear intersubband refractive index changes(RICs) in a semi-parabolic quantum well with applied electric field were investigated in detail.Numerical calculations on GaAs were performed for the dependence of RIC on the incident optical intensity,the frequency of confined potential of the semi-parabolic quantum well and the strength of applied electric field.Results reveal that the RICs in the semi-parabolic quantum well system sensitively depend on these factors.
张立. 电场对非对称半抛物量子阱中的子带内跃迁引起的线性与非线性折射率改变的影响[J]. 红外与毫米波学报, 2005, 24(5): 378. 张立. EFFECTS OF APPLIED ELECTRIC FIELDS ON LINEAR AND NONLINEAR INTERSUBBAND REFRACTIVE INDEX CHANGES IN SEMI-PARABOLIC QUANTUM WELLS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(5): 378.