红外与毫米波学报, 2005, 24 (6): 405, 网络出版: 2006-06-12
Pb(Zr0.3Ti0.7)O3热释电薄膜材料研究
INVESTIGATION ON Pb(Zr0.3Ti0.7)O3 PYROELECTRIC THIN FILM MATERIALS
PZT薄膜 射频磁控溅射 非制冷红外焦平面 探测器阵列 lead zirconate titanate films RF-magnetron sputtering uncooled infrared focal plane detector arrays
摘要
利用射频磁控溅射法对0.8Pb(Zr0.3Ti0.7)O3+0.2PbO的陶瓷靶进行溅射,在5英寸的TiOx/Pt/Ti/SiO2/Si基片上制备出了PZT薄膜.实验表明,PZT薄膜的取向由(111)到(100)的改变可以通过精确控制基片温度来实现.(111)取向的薄膜具有良好的介电、铁电和热释电性能,其剩余极化强度、介电常数、介电损耗、矫顽场和热释电系数分别为20μC/cm2,370,1.5%,130kV/cm和1.1×10-8C/cm2K,该薄膜可望在非制冷红外焦平面探测器阵列中得到应用.
Abstract
Lead zirconate titanate thin films were successfully prepared on 5-inch TiO_x/Pt/Ti/SiO_2/Si substrates by RF-Magnetron Sputtering method.The experimental results show that the orientation of PZT thin films can be changed from(111) to(100) by precisely controlling the substrate temperature.The (111)-oriented films with thickness of 500nm have the remanent polarization of 20μC/cm~2,dielectric constant of 370,dielectric loss of 1.5%,coercive field of 130kV/cm and pyroelectric coefficient of 1.1×10~(-8)C/cm~2K.The films can be used for fabricating uncooled infrared focal plane detector arrays.
钟朝位, 汪红兵, 彭家根, 张树人, 张万里. Pb(Zr0.3Ti0.7)O3热释电薄膜材料研究[J]. 红外与毫米波学报, 2005, 24(6): 405. 钟朝位, 汪红兵, 彭家根, 张树人, 张万里. INVESTIGATION ON Pb(Zr0.3Ti0.7)O3 PYROELECTRIC THIN FILM MATERIALS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(6): 405.