在顺位流模型与"4阶段"粒子流动模型的基础上,提出了一种用于分析100ns/MA级电子束流的低阻抗强箍缩二极管物理过程的理论模式.在这种理论分析模式中,将电子和离子的流动情况随时间的演变过程分成非箍缩电子流、弱箍缩电子流、强箍缩电子流3个不同的阶段,分别结合聚焦流和顺位流模型对各个阶段特性进行估算.利用KARAT PIC数值模拟软件并结合"强光一号"加速器的工作状态,对该类型二极管中电子束的流动过程作了数值模拟,并在"强光一号"加速器上开展了实验研究.数值模拟和实验结果的对比表明,所提出的新的理论分析模式是合理可行的.

This paper presents a theoretical analysis model based on the parapotential flow and "four-phase" charge flow models.The model could more exactly describe the physics process in a low-impedance MA intense pinched beam diode. In the model, the evolution of electrons is divided into three phases:no pinching phase, weak pinch phase and tight pinch phase,and in each phase a proper empirical formula is provided for writing the characters of electron beam. Using the KARAT PIC program, the evolution process of electron flow was simulated in the diode, which was designed to test on the Qiangguang-I accelerator for producing intensive current pinched electron beam. Moreover, the experiment with the diode was carried out on Qiangguang-I accelerator. The contrast between simulated and experimental results shows that the theoretical analysis model called three phases electron beam model is reasonable.