对940nm波长高功率线阵二极管激光器的封装结构进行了重新设计,并在此基础上开展了芯片的封装实验.封装出的线阵二极管激光器,在连续工作时输出激光功率达40W,在准连续工作时(占空比0.5%),输出峰值功率可达100W.

A package structure of high power linear array diode laser (DL) with 940nm wavelength was designed using active cooling way by which, the cooler was made by line cutting with simply long water cooler, Its thermal resistance was measured as 0.45℃/W. Experiment was carried out. in which the packaged DL laser power reached 40W when continuously work, and its peak power reached 100W at 100Hz frequency and 50μs pulse width.When the pulse width increased to 200μs, its laser power decreased to 103W.