量子电子学报, 2005, 22 (6): 932, 网络出版: 2006-06-12
Au/4H-SiC肖特基UV光电二极管的温度特性
Temperature characteristics of Au/n-4H-SiC Schottky UV photodiode
光电子学 碳化硅 光电二极管 肖特基势垒 光谱响应 温度 optoelectronics SiC photodiode Schottky Barrier spectrum response temperature
摘要
采用微电子平面工艺,高真空电子束蒸发金属Au做肖特基接触,多层金属Ni、Ti、Ag合金在背底上做欧姆接触,制作出Au/n-4H-SiC肖特基势垒紫外光电二极管(UV-SBD).测试并分析了在不同温度下该器件的I-V特性及光谱响应特性.实验表明:器件高温下有较低的反向漏电流,正向开启电压下降速度为-1.2 mV/℃;波长响应范围为200~400 nm,在23℃和260℃时,光谱响应峰值分别出现在320 nm和330 nm,每100℃波长红移约4 nm;响应灵敏度随温度升高而降低,平均每100℃降低2倍.
Abstract
With microelectronics plane technology, electron beam evaporation is used to deposit metal Au on the surface of n-4H-SiC to form Schottkv contact, alloys Ti, Ni, Ag used to form Ohmic contact on the n+ backside, the Schottkv barrier ultraviolet photodiode has been fabricated. The spectrum response characteristics and the I-V characteristics of the devices have been measured and analyzed at different temperatures. The measurement results show that the device has lower leakage current at high temperatures. The descendent speed of the forward turn-on voltage is -1.2 mV/℃. The response wavelength range is from 200 nm to 400nm, the peak value of the spectrum response appears in 320 nm at 23 ℃ and 330 nm at 260 ℃ respectively, and the wavelength has red shift about 4 nm every 100 ℃;The sensitivity of response reduces as temperature rises, and it is reduced by 2 times every 100 ℃ on average
梁锦, 谢家纯, 黄莉敏, 孙腾达. Au/4H-SiC肖特基UV光电二极管的温度特性[J]. 量子电子学报, 2005, 22(6): 932. 梁锦, 谢家纯, 黄莉敏, 孙腾达. Temperature characteristics of Au/n-4H-SiC Schottky UV photodiode[J]. Chinese Journal of Quantum Electronics, 2005, 22(6): 932.