量子电子学报, 2003, 20 (3): 345, 网络出版: 2006-05-15
InGaAs/AlGaAs量子阱中量子尺寸效应对PL谱的影响
Quantum Confinement Effect on PL Spectrum of InGaAs/AlGaAs Multi-quantum Wells
InGaAs/AlGaAs量子阱 量子尺寸效应 应变效应 InGaAs/AlGaAs multi-quantum wells MOCVD MOCVD quantum effect strain effect
摘要
本文采用金属有机物化学气相淀积(MOCVD)方法设计并生长了两组InGaAs/AlGaAs应变多量子阱,量子阱的厚度分别为3 nm和6 nm,对其光致发光谱(PL)进行了研究,二者的发光波长分别为843 nm和942 nm,用有限深单量子阱理论近似计算了由于量子尺寸效应和应变效应引起的InGaAs/AlGaAs量子阱带隙的改变,这解释了两组样品室温下PL发射波长变化的原因.
Abstract
In the present paper, two types of strained InGaAs/AlGaAs multi-quantum wells grown by MOCVD were designed, in which the thicknesses of quantum wells were 3 nm and 6 mn, respectively. The PL peak wavelengths were measured to be 842 nm and 942 nm, respectively. The shift of energy band in the InGaAs/AlGaAs MQWs due to the quantum size effect, and the strain effect in the active layers was calculated with the theory of the finite quantum well, and the shift of the PL peak wavelengths was also interpreted.
于永芹, 黄柏标, 尉吉勇, 潘教青, 周海龙, 齐云, 陈文澜, 秦晓燕, 张晓阳, 任忠祥. InGaAs/AlGaAs量子阱中量子尺寸效应对PL谱的影响[J]. 量子电子学报, 2003, 20(3): 345. 于永芹, 黄柏标, 尉吉勇, 潘教青, 周海龙, 齐云, 陈文澜, 秦晓燕, 张晓阳, 任忠祥. Quantum Confinement Effect on PL Spectrum of InGaAs/AlGaAs Multi-quantum Wells[J]. Chinese Journal of Quantum Electronics, 2003, 20(3): 345.
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