量子电子学报, 2003, 20 (6): 707, 网络出版: 2006-05-15
大应变In0.3Ga0.7As/GaAs量子阱激光器的生长和研究
Growth and Study of High Strain In0.3Ga0.7As/GaAs Quantum Well Laser Diode Device
应变量子阱激光器 生长中断 应变缓冲层 strain quantum well laser diodes MOCVD MOCVD growth interruption strain buffer layer
摘要
金属有机物化学气相沉积(MOCVD)方法生长应变InGaAs/GaAs量子阱,应变缓冲层结合生长中断改善量子阱的PL谱特性.用该量子阱制备的激光器有很低的阈值电流密度(43 A/cm2)和较高的斜率效率(0.34W/A,per facet).
Abstract
Strain buffer layer and growth interruption were applied in the QW growth by mentalorganic chemical vapor deposition (MOCVD) to improve QW photoluminescence performance. The laser diodes using the QW have very low threshold current densities (43 A/cm2) and high slop efficience (0.34 W/A, per facet).
潘教青, 黄柏标, 张晓阳, 任忠祥, 秦晓燕, 朱宝富, 李先林. 大应变In0.3Ga0.7As/GaAs量子阱激光器的生长和研究[J]. 量子电子学报, 2003, 20(6): 707. 潘教青, 黄柏标, 张晓阳, 任忠祥, 秦晓燕, 朱宝富, 李先林. Growth and Study of High Strain In0.3Ga0.7As/GaAs Quantum Well Laser Diode Device[J]. Chinese Journal of Quantum Electronics, 2003, 20(6): 707.
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