量子电子学报, 2004, 21 (6): 751, 网络出版: 2006-05-15
势阱离子+腔场系统中量子逻辑门的实现
Implementation of quantum logic gates via the interaction in trapped-ion cavity QED
量子计算 量子逻辑门 势阱离子 腔场 Lanb-Dicke参数 quantum computation quantum logic gate trapped ions cavity field Lamb-Dicke limit
摘要
基于光腔中的势阱离子同时与外激光场和腔场发生相互作用的特性,我们提出了一种量子逻辑门的实现方案.在该方案中,量子逻辑门是以离子内态和腔态作为比特,而势阱离子的运动态作为辅助比特始终保持在基态.而且,没有采用Lanb-Dicke近似,因而更容易为实验所实现.
Abstract
A new scheme is proposed to implement quantum logic gates such as single qubit rotation gate, two qubit controlled-phase gate and controlled-NOT gate, using the method based on a quantum system, which is composed of the one-dimensional trapped-ion motion and a single cavity field mode. In the present scheme, computation basis is composed by the internal ionic state and the cavity state by the connection of motional state. Furthermore, Lamb-Dicke limit is not required.
李晋芳, 张志军, 马雷. 势阱离子+腔场系统中量子逻辑门的实现[J]. 量子电子学报, 2004, 21(6): 751. 李晋芳, 张志军, 马雷. Implementation of quantum logic gates via the interaction in trapped-ion cavity QED[J]. Chinese Journal of Quantum Electronics, 2004, 21(6): 751.
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