量子电子学报, 2005, 22 (1): 81, 网络出版: 2006-05-15
应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用
Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD
光电子学 半导体激光器 应变量子阱 金属有机化学气相淀积 optoelectronics semiconductor lasers strain quantum wells metallorganic chemical vapor deposition
摘要
使用低压MOCVD生长应变InGaAs/GaAs 980 nm量子阱.研究了生长温度、生长速度对量子阱光致发光谱(PL)的影响.并将优化后的量子阱生长条件应用于980 nm半导体激光器的研制中,获得了直流工作下,阈值电流为19 mA,未镀膜斜率效率为0.6 W/A,输出功率在100 mW的器件.
Abstract
The strained InGaAs/GaAs quantum wells (QWs) for 980 nm LD were grown by MOCVD. The effects of growth temperature and growth rate of InGaAs/GaAs QWs were investigated. We applied the optimized growth condition to 980 high power LD growth. Without coating, an optical power output of 100 mW, Ith of 19 mA, differential efficiency of 0.6 W/A were obtained.
俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. 应变InGaAs/GaAs量子阱MOCVD生长优化及其在980 nm半导体激光器中的应用[J]. 量子电子学报, 2005, 22(1): 81. 俞波, 盖红星, 韩军, 邓军, 邢艳辉, 李建军, 廉鹏, 邹德恕, 沈光地. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81.