在等离子体作用下,以CO2/H2混合气为氧源,Zn(C2H5)2锌为锌源,在单晶硅上生长出高度择优取向的氧化锌薄膜。X射线衍射分析表明,薄膜为六方结构,c轴高度择优;原子力显微镜观察到晶粒是有规律地按六方排布,薄膜的表面粗糙度较小;从光致发光谱还发现在380 nm处有非常强的紫外峰。

ZnO films are prepared by plasma enhanced chemical vapor deposition (PECVD), using carbon dioxide-hydrogen gas and diethylzinc gas as reactant sources. Carbon dioxide reacts with hydrogen in the plasma charmer to produce oxygen source. Crystallographic properties and surface morphology of the films are characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results indicate that the wurtzite structure of ZnO thin films with a strong c-axis orientation is successfully deposited on Si substrate. AFM images show that the grains arrange regularly and roughness of the surface is very small. A type emission peak at 380 nm of ZnO is also observed from photoluminescence (PL) spectrum.