光子学报, 2005, 34 (9): 1363, 网络出版: 2006-06-12
GaSb衬底上外延InAsxSb1-x材料的LP-MOCVD研究
The Study of InAsxSb1-x on GaSb Substrate Grown by LP-MOCVD
摘要
采用自制的低压金属有机化学汽相淀积LP-MOCVD设备,在(100)面GaSb单晶衬底上外延生长了InAsSb材料.用X射线双晶衍射、光学显微镜和扫描电镜、电子探针能谱仪等对材料特性进行了表征,分析研究了生长温度、V/Ⅲ比、过渡层等对外延层的影响.并且获得了与GaSb衬底晶格失配度较低的表面光亮的晶体质量较好的InAsSb外延层.
Abstract
InAsSb epitaxy had been obtained on(100) GaSb substrate by a home-made low pressure MOCVD system.The characteristic of InAsSb epitaxy was investigated by means of x-ray diffraction technique,optical microscopy and scanning electron microscopy(SEM),and electron microprobe analysis(SEM).And the dependence of surface morphology and solid composition of epitaxy on growth temperature,Ⅴ/Ⅲ ratio and buffer layer is studied.High quality mirror-like surfaces with a minimum lattice mismatch was obtained.
李晓婷, 王一丁, 汪韬, 殷景致, 王警卫, 赛小锋, 高鸿楷, 张志勇. GaSb衬底上外延InAsxSb1-x材料的LP-MOCVD研究[J]. 光子学报, 2005, 34(9): 1363. 李晓婷, 王一丁, 汪韬, 殷景致, 王警卫, 赛小锋, 高鸿楷, 张志勇. The Study of InAsxSb1-x on GaSb Substrate Grown by LP-MOCVD[J]. ACTA PHOTONICA SINICA, 2005, 34(9): 1363.