光子学报, 2005, 34 (10): 1448, 网络出版: 2006-06-12
新型光泵浦垂直外腔面发射半导体激光器
An Novel Laser-Optically Pumped Vertical External Cavity Surface Emission Laser
面发射半导体激光器 光泵浦 量子阱 增益芯片 Vertical external cavity surface emitting laser Optically pumped Quantum well Gain chip
摘要
用量子阱技术生长的半导体材料作激光增益介质,AlGaAs/GaAs对做布喇格反射镜,并以简单的平凹腔做谐振腔,半导体激光器作泵浦源,制作出了光泵垂直外腔面发射半导体激光器.在抽运功率1.5
W时,得到了中心波长1005 nm、最大输出功率40 mW的激光,光-光转换效率2.7%.
W时,得到了中心波长1005 nm、最大输出功率40 mW的激光,光-光转换效率2.7%.
Abstract
A novel laser-optically pumped vertical external cavity surface emitting laser was demonstrated.A diode laser was employed as a pump source.The gain structure of the semiconductor was quantum wells grown by MOCVD technology.By adjusting the cavity which was typically plane-concaved structure carefully,the laser was obtained at 1005 nm centre wavelength and the output power was 40 mW.The optical-optical efficiency was 2.7%.
宋晏蓉, 郭晓萍, 王勇刚, 陈檬, 李港, 于未, 胡江海, 张志刚. 新型光泵浦垂直外腔面发射半导体激光器[J]. 光子学报, 2005, 34(10): 1448. 宋晏蓉, 郭晓萍, 王勇刚, 陈檬, 李港, 于未, 胡江海, 张志刚. An Novel Laser-Optically Pumped Vertical External Cavity Surface Emission Laser[J]. ACTA PHOTONICA SINICA, 2005, 34(10): 1448.
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