光子学报, 2005, 34 (5): 669, 网络出版: 2006-06-12
大截面SOI脊型波导单模条件的研究
Analysis of the Single-mode Condition for a Rib SOI Waveguide with a Large Cross Section
摘要
利用有限差分方法(FDM)对大横截面SOI(Silicon-on-insulator)脊型光波导的本征模进行了计算分析,从而确定了SOI脊型波导的单模条件,即归一化外脊高和归一化脊宽的关系.通过比较,进一步明确了归一化外脊高大于0.5时现有的单模条件解析公式中常数项的取值为0.3.同时,还对归一化外脊高小于0.5时的单模条件也做了计算和讨论.
Abstract
The single mode condition for a rib waveguide based on silicon-on-insulator (SOI) is determined through the eigen mode analysis using a finite difference method. This single mode condition gives the relation between the normalized rib height r and the normalized rib width t. A comparison is made between the present result obtained with a FDM and previous analytical formulas for the single mode condition. Simulation results show that the value for the constant in the previous analytical formulas should be chosen as 0.3 when r >0.5. The present single mode condition is also extended to the range of r<0.5 (which is not considered before).
殷源, 戴道锌, 时尧成, 何赛灵. 大截面SOI脊型波导单模条件的研究[J]. 光子学报, 2005, 34(5): 669. 殷源, 戴道锌, 时尧成, 何赛灵. Analysis of the Single-mode Condition for a Rib SOI Waveguide with a Large Cross Section[J]. ACTA PHOTONICA SINICA, 2005, 34(5): 669.