设计并制作了1.55 μm偏振无关半导体光放大器腔面TiO₂/SiO₂多层减反膜,工艺过程中设计并使用了反射率实时监控装置,得到了低于5×10-4的腔面剩余反射率.器件测试结果表明,管芯在250 mA电流下仍处于未激射状态,表明减反膜有效抑制了芯片的激射.半导体光放大器的自发辐射(ASE)谱波动在0.4 dB以下,3 dB带宽大于52 nm,半导体光放大器小信号增益近27 dB,在1520～1580 nm波长范围内偏振灵敏度小于0.5 dB.

TiO_2/SiO_2 multiple layers anti-refledtion (AR) coatings for the facets of 1.55 μm polarization insensitive semiconductor optical amplifiers were designed and fabricated. Less than 5×10 -4 reflectivities were obtained for both two layers and four layers AR coatings. An In-Situ monitoring for reflectivity was designed and employed during the coating process. The amplifier was fabricated forming ridge waveguide structure with 7° tilted cavity, which showed a less than 0.4 dB ASE ripple, a more than 52 nm bandwidth, excellent polarization insensitivity (less than 0.5 dB) over the entire range of wavelength (1.52~1.58 μm) and a gain of 27 dB at bias current of 200 mA and 1550 nm wavelength.