光子学报, 2005, 34 (3): 340, 网络出版: 2006-06-12
水浴条件下YAG倍频、三倍频激光切割Si片比较
Microcutting Si Wafer in Water Bath by the Second and Third Harmonic Output of YAG Laser
摘要
对Nd: YAG固体激光器倍频、三倍频激光输出在空气和水浴环境下刻蚀Si片进行了研究,分析了刻蚀速率和样品表面形貌,得出了在355 nm刻蚀波长下,水浴环境中,刻蚀速率最快,刻槽宽度最小,小于10 μm的实验结论,为工业应用提供参考.
Abstract
It is reported that the slot of microcutting Si wafer by second and third harmonic output of YAG laser is narrower in water bath than in air environment. The surface morphology and etching rate for water bath and air environment are compared in detail. The cutting gap as small as 10 μm with edge fluctuation less than 5 μm is obtained in water bath by 355 nm laser. This technology may be helpful for industrial applications.
凌磊, 楼祺洪, 李抒智, 叶震寰, 马海霞, 董景星. 水浴条件下YAG倍频、三倍频激光切割Si片比较[J]. 光子学报, 2005, 34(3): 340. 凌磊, 楼祺洪, 李抒智, 叶震寰, 马海霞, 董景星. Microcutting Si Wafer in Water Bath by the Second and Third Harmonic Output of YAG Laser[J]. ACTA PHOTONICA SINICA, 2005, 34(3): 340.
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