光学学报, 2006, 26 (5): 746, 网络出版: 2006-06-01
组合刻蚀法制备窄带滤光片列阵
Arrays of Narrow Bandpass Filters Fabricated by Combinatorial Etching Technique
光学器件 滤光片 集成 组合刻蚀法 列阵 制备 optical devices filter integration combinatorial etching technique array fabrication
摘要
介绍了组合刻蚀法制备窄带滤光片列阵的基本原理和制备工艺,这是一种效率非常高的制备方法,只需N次刻蚀就可以完成2N通道窄带滤光片列阵的制备,而且可以用于制备不同波段窄带滤光片列阵。展示了可见-近红外波段32通道窄带滤光片列阵和中红外波段16通道窄带滤光片列阵的实验结果,其中32通道窄带滤光片列阵的带通峰位基本呈线性分布在774.7~814.2 nm之间,所有滤光片的半峰全宽都非常窄(δλ<1.5 nm),相应于δλ/λ<0.2%,半峰全宽最窄的滤光片达到0.8 nm,相应于δλ/λ<0.1%,其带通峰位λ=794.3 nm;各通道的带通透过率在21.2%~32.4%之间,大部分在30%左右。
Abstract
The basic mechanism and fabrication processes of the combinatorial etching technique have been introduced. It is a high-efficiency technique for the integration of narrow bandpass filters (NBPFs). A filter array integrated with 2N NBPFs can be fabricated with only N times of etching processes, and the technique can be applied in different wavelength regions. The experimental results of the array integrated with 32 filters in the visible-NIR and the array integrated with 16 filters in the MIR have been demonstrated. The pass-bands of the former NBPFs distribute linearly in the range of 774.7~814.2 nm. All the filters' full widths at half maximum (FWHM) are very narrow and less than 1.5 nm, corresponding to δλ/λ of each filter less than 0.2%. The narrowest FWHM of the integrated filters comes to 0.8 nm with δλ/λ of 0.1% at the wavelength of 794.3 nm. The transmittances of the pass-bands are between 21.2% and 32.4%. Most of them are near 30%.
王少伟, 王利, 吴永刚, 王占山, 刘定权, 林炳, 陈效双, 陆卫. 组合刻蚀法制备窄带滤光片列阵[J]. 光学学报, 2006, 26(5): 746. 王少伟, 王利, 吴永刚, 王占山, 刘定权, 林炳, 陈效双, 陆卫. Arrays of Narrow Bandpass Filters Fabricated by Combinatorial Etching Technique[J]. Acta Optica Sinica, 2006, 26(5): 746.